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| SMD Efficient Fast Recovery Rectifier CFRA151-G Thru CFRA157-G (RoHS Device) Reverse Voltage: 50 ~ 1000 Volts Forward Current: 1.0 Amp Features: Ideal for surface mount applications Easy pick and place Plastic package has Underwriters Lab. flammability classification 94V-0. Fast recovery time: 150 ~ 500nS Low leakage current 0.067(1.70) 0.051(1.29) 0.110(2.79) 0.086(2.18) DO-214AC (SMA) Mechanical Data: Case: SMA/DO-214AC molded plastic Terminals: solderable per MIL-STD-750, method 2026 Polarity: Color band denotes cathode end Mounting position: Any Approx. Weight: 0.04 gram 0.180(4.57) 0.160(4.06) 0.012(0.31) 0.006(0.15) 0.091(2.31) 0.067(1.70) 0.059(1.50) 0.035(0.89) 0.008(0.20) 0.004(0.10) 0.209(5.31) 0.185(4.70) Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characterics: Parameter Max. Repetitive Peak Reverse Voltage Max. DC Blocking Voltage Max. RMS Voltage Peak Surge Forward Current 8.3ms single half sine-wave superimposed on rate load (JEDEC method) Max. Average Forward Current Max. Instantaneous Forward Voltage at 1.0A Reverse recovery time Max. DC Reverse Current at Rated DC Blocking Voltage Ta=25oC Ta=100oC Max. Thermal Resistance (Note1) Max. Operating Junction Temperature Storage Temperature Symbol CFRA 151-G 50 50 35 CFRA 152-G 100 100 70 CFRA 153-G 200 200 140 CFRA 154-G 400 400 280 CFRA 155-G 600 600 420 CFRA 156-G 800 800 560 CFRA 157-G 1000 1000 700 Unit V V V VRRM VDC VRMS IFSM Io VF Trr IR R JL 50 A 1.5 1.3 100 250 500 A V nS uA o C/W o o 5.0 50 53 -55 to +155 -55 to +150 Tj TSTG C C Note1: Thermal resistance from junction to ambient. "-G" suffix designates RoHS compliant Version www.comchiptech.com Page1 SMD Efficient Fast Recovery Rectifier Rating and Characteristic Curves (CFRA151-G thru CFRA157-G) Fig. 1 - Reverse Characteristics 1000 100 Fig.2 - Forward Characteristics Reverse Current ( uA ) Forward current ( A ) 100 Tj=125 C 10 10 1 1.0 Tj=25 C 0.1 Tj=25 C Pulse width 300uS 4% duty cycle 0.1 0 0.01 20 40 60 80 100 0 0.4 0.8 1.2 1.6 2.0 Percent of Rated Peak Reverse Voltage (%) Forward Voltage(V) Fig. 3 - Junction Capacitance 140 120 Junction Capacitance (pF) Fig. 4 - Non Repetitive Forward Surge Current 50 Peak Surge Forward Current (A) 8.3mS Single Half Sine Wave JEDEC methode 100 80 60 40 20 0 0.1 Tj=25 C f=1.0MHz Vsig=50mV p-p 40 30 20 Tj=25 C 10 0 1.0 10 100 1000 1 5 10 50 1 00 Reverse Voltage (V) Number of Cycles at 60Hz Fig. 5 - Test Circuit Diagram and Reverse Recovery Time Characteristics 50 NONINDUCTIVE 10 NONINDUCTIVE +0.5A Fig. 6 - Current Derating Curve 2.1 Average Forward Current ( A ) trr | | | | | | | | 1.8 1.5 1.2 0.9 0.6 0.3 00 (+) 25Vdc (approx.) () 1 NONINDUCTIVE OSCILLISCOPE (NOTE 1) D.U.T. () PULSE GENERATOR (NOTE 2) (+) 0 -0.25A Single Phase Half Wave 60Hz NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 2. Rise Time= 10ns max., Source Impedance= 50 ohms. -1.0A 1cm SET TIME BASE FOR 50 / 10ns / cm 25 50 75 100 125 150 175 Ambient Temperature ( C) "-G" suffix designates RoHS compliant Version www.comchiptech.com Page2 |
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